GW80H65 80H65 IGBT

Advanced Structure:Developed using a proprietary trench gate field-stop design.
Efficiency Maximization:Balances conduction and switching losses.
Safe Paralleling:Tight parameter distribution ensures secure parallel operation.
Fast Recovery Diode:Enhances performance in antiparallel applications.
Applications
Photovoltaic Inverters:Optimize energy conversion in solar power systems.
High-Frequency Converters:Efficiently handle variable frequencies.
Technical Specifications
Voltage Rating: 650 V
Continuous Collector Current: 80 A (TC = 100 °C)
Junction Temperature: Up to 175 °C